isolated diode array with hirel mq, mx, mv, and msp screening options www. microsemi . com scottsdale division 1N6506 1N6506 description appearance these low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-pin package for use as steering diodes protecting up to ei ght i/o ports from esd, eft, or surge by directing them to the positive side of the power supply line (see figure 1). this circuit application is further complimented by the 1n6507 (separate data sheet) that has a common anode. an external tvs diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. they may also be used in fast switching core-driver applications. th is includes computers and peripheral equipment such as magnetic cores, thin-fil m memories, plated-wire memories, etc., as well as decoding or encoding applications. t hese arrays offer many advantages of integrated circuits such as high-density pack aging and improved reliability. this is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in pc board mounting. 14-pin ceramic dip important: for the most current data, consult microsemi?s website: http://www.microsemi.c o m features applications / benefits ? hermetic ceramic package ? isolated diodes to eliminate cross-talk voltages ? high breakdown voltage v br > 60 v at 10 a ? low leakage i r < 100na at 40 v ? low capacitance c < 4.0 pf ? switching speeds less than 20 ns ? options for screening in accordance with mil-prf- 19500/474 for jan, jantx, jantxv, and jans are available by adding mq, mx, mv, or msp prefixes respectively to part numbers. for example, designate mx1N6506 for a jantx screen. ? high frequency data lines ? rs-232 & rs-422 interface networks ? ethernet: 10 base t ? computer i/o ports ? lan ? switching core drivers ? iec 61000-4 compatible (see circuit in figure 1) 61000-4-2 esd: air 15 kv, contact 8 kw 61000-4-4 (eft): 40 a ? 5/50 ns 61000-4-5 (surge): 12 a 8/20 s maximum ratings mechanical and packaging ? v br reverse breakdown voltage 60 v min (note 1 & 2) ? i o continuous forward current of 300 ma (note 1 & 3) ? i fsm forward surge current (tp=1/120 s) 500 ma (note 1) ? 400 mw power dissipation per junction @ 25 o c ? 600 mw power dissipation per package @ 25 o c (note 4) ? operating junction temper ature range ?65 to +150 o c ? storage temperature range of ?65 to +200 o c ? 14-pin ceramic dip ? weight 2.05 grams (approximate) ? marking: logo, part number, date code ? pin #1 to the left of t he indent on top of package ? carrier tubes; 25 pcs (standard) note 1: each diode note 2: pulsed: p w = 100 ms max; duty cycle < 20% note 3: derate at 2.4 ma/ o c above +25 o c note 4: derate at 4.0 mw/ o c above +25 o c electrical characteristics (per diode) @ 25 o c unless otherwise specified maximum forward voltage v f1 i f = 100 ma (note 1) maximum forward voltage v f2 i f = 500 ma (note 1) maximum reverse current i r1 v r = 40 v maximum capacitance (pin to pin) c t v r = 0 v f = 1 mhz maximum forward recovery time t fr i f = 500 ma maximum reverse recovery time trr i f = i r = 200 ma i rr = 20 ma r l = 100 ohms part number v v a pf ns ns 1N6506 1 1.5 0.1 4.0 40 20 note 1: pulsed: p w = 300 us +/- 50 s, duty cycle < 2%, 90 s after leading edge. microsemi scottsdale division page 1 copyright ? 2006 5-1-2006 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
isolated diode array with hirel mq, mx, mv, and msp screening options www. microsemi . com scottsdale division 1N6506 1N6506 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current i r maximum leakage current: the maximum leakage current that will flow at t he specified voltage and temperature i fsm forward surge current: the peak forward surge current at a specified pulse width c t capacitance: the capacitance of the tvs as defin ed @ 0 volts at a frequency of 1 mhz and stated in picofarads schematic package dimensions circuit supply rail (+v cc ) gnd (or -v cc ) steering diode application figure 1 i/o port microsemi scottsdale division page 2 copyright ? 2006 5-1-2006 rev d 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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